Part Name
STB34N50DM2AG
Description
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MFG CO.
STMicroelectronics
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STB34N50DM2AG Datasheet - STMicroelectronics
STMicroelectronics
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 500 V, 0.299 ? typ., 11 A MDmesh? DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.085 ? typ., 34 A MDmesh? DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.260 ? typ., 12 A MDMesh? DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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Automotive-grade N-channel 500 V, 0.336 ? typ., 10 A MDmesh? M2 Power MOSFET in a DPAK package
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