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STB20N95K5(2012) Datasheet - STMicroelectronics

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Part Name
STB20N95K5

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page
22 Pages

File Size
1.1 MB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.


FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications


Part Name
Description
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