STB12NM50T4(2005) Datasheet - STMicroelectronics

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

General Features
■ TYPICAL RDS(on) = 0.30 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ LOW INPUT CAPACITANCE AND GATE
   CHARGE
■ 100% AVALANCHE TESTED
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
   MANUFACTURING YIELDS

APPLICATIONS
   The MDmesh™ family is very suitable for increasing 
   power density of high voltage converters allowing 
   system miniaturization and higher efficiencies.