STB12NM50ND(2008) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.29 ?, 11 A MDmesh? II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO220FP
STMicroelectronics
N-channel 500 V, 0.73 ?, 5 A MDmesh?II Power MOSFET in DPAK ( Rev : 2011 )
STMicroelectronics
N-channel 500 V, 0.299 ? typ., 11 A MDmesh? DM2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 650 V, 0.308 ? typ., 11 A MDmesh? V Power MOSFET in D2PAK and DPAK packages
STMicroelectronics
MOSFET ? N-Channel, SUPERFET II 800 V, 11 A, 400 m?
ON Semiconductor
N-channel 600 V, 0.32 ? typ., 11 A, FDmesh? II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 500 V, 0.22 ?, 20 A D2PAK, TO-220FP, TO-220 FDmesh? Power MOSFET (with fast diode)
STMicroelectronics
N-Channel UniFET?II MOSFET?500 V, 3 A, 2.5?
Fairchild Semiconductor
N-Channel UniFET? II MOSFET 500 V, 11.5 A, 520m?
Fairchild Semiconductor
N-channel 500 V, 0.53 ?, 7 A DPAK, TO-220FP, TO-220 MDmesh? II Power MOSFET
STMicroelectronics