ST13005 Datasheet - STMicroelectronics
MFG CO.
STMicroelectronics
DESCRIPTION
The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
■ MEDIUM VOLTAGE CAPABILITY
■ NPN TRANSISTORS
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
Page Link's:
1
2
3
4
5
6
7
8
Part Name
Description
View
MFG CO.
High voltage fast-switching NPN power transistors
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ( Rev : 2000 )
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ( Rev : 1997 )
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Inchange Semiconductor
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ( Rev : 1999 )
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMicroelectronics
High voltage fast-switching NPN power transistors
STMicroelectronics
