SSG6618-C Datasheet - Secos Corporation.
MFG CO.
Secos Corporation.
DESCRIPTION
The SSG6618-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSG6618-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
• Advanced High Cell Density Trench Technology
• Super Low Gate Charge
Part Name
Description
View
MFG CO.
7.3A, 30V, RDS(ON) 18m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
7.5A, 30V, RDS(ON) 13.5m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
5A, 30V, RDS(ON) 35m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
12A, 30V, RDS(ON) 9m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
3.5A , 30V , RDS(ON) 58m? N-Channel Enhancement Mode MOSFET
Secos Corporation.
110A , 30V , RDS(ON) 2.5m? N-Channel Enhancement Mode MOSFET
Secos Corporation.
60A , 30V , RDS(ON) 6 m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
5.8A, 30V, RDS(ON) 30 m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
7.5A, 30V, RDS(ON) 13.5 m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
5.8A , 30V , RDS(ON) 32 m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
