SPV1001N30 Datasheet - STMicroelectronics

Description
The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current.
The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor.
The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.

FEATUREs
■ SPV1001N30 IF=12.5 A, VR=30 V
■ SPV1001N40 IF=12.5 A, VR=40 V
■ Very low forward voltage drop
■ Very low reverse leakage current
■ 150 °C operating junction temperature

APPLICATIONs
■ Photovoltaic panels