SMS2009E-C Datasheet - Secos Corporation.
MFG CO.

Secos Corporation.
DESCRIPTIONS
The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
FEATURES
• Reliable and Rugged
• Green Device Available
• ESD Protection
Part Name
Description
View
MFG CO.
0.8A, 20V, RDS(ON) 350m? N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
2.2A , 20V , RDS(ON) 100m? N-Ch Enhancement Mode Power MOSFET
Secos Corporation.
0.9A , 20V , RDS(ON) 350m? N-Ch Enhancement Mode Power MOSFET
Secos Corporation.
6.0A , 20V , RDS(ON) 28 m? N-Ch Enhancement Mode Power MOSFET
Secos Corporation.
7A , 20V , RDS(ON) 21 m? N-Ch Enhancement Mode Power MOSFET
Secos Corporation.
4A, 20V, RDS(ON) 37m? Dual N-Ch Enhancement Mode Power MOSFET
Secos Corporation.
-11A, -20V, RDS(ON) 20m? Dual P-Ch Enhancement Mode Power MOSFET
Secos Corporation.
-0.86A, -20V, RDS(ON) 200m? Dual P-Ch Enhancement Mode Power MOSFET
Secos Corporation.
P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m?
Secos Corporation.
-0.66A, -20V, RDS(ON) 520 m? Dual P-Ch Enhancement Mode Power MOSFET
Secos Corporation.