SMS1200032M2-ISATH Datasheet - Sanan Semiconductor Co., Ltd.

Description
   The Sanan Semiconductor 1200V/32mΩ silicon carbide power MOSFET uses advanced SiC MOSFET technology with low on-resistance, low switching losses, and a high operation temperature of 175℃. It is suitable for use in high frequency circuits and provides a reduction in overall system size, increased efficiency and increased switching frequency. It has been widely used in applications including solar inverters, uninterrupted power supplies, switch mode power supplies, and motor drives. Using RoHS compliant components, it is qualified for use in industrial application.

FEATUREs
➢ High blocking voltage with low on-resistance
➢ High switching speed with low capacitance
➢ Very fast and robust intrinsic body diode with low reverse recovery
➢ Very low switching losses
➢ Excellent avalanche ruggedness
➢ RoHS compliant

Benefits
➢ Greater system efficiency
➢ Reduced cooling requirements
➢ Increased power density
➢ Increased system switching frequency
➢ Easy to parallel and simple to drive

Potential Applications
➢ Solar inverters
➢ Uninterrupted power supplies
➢ Switch mode power supplies
➢ Motor drives