SFS2327(V2) Datasheet - Solid State Devices, Inc.
MFG CO.

Solid State Devices, Inc.
FEATURES:
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25°C
• Low Holding Current IH = 1 mA (Max) @ 25°C
• Anode Common to Case
• Hermetically Sealed
Part Name
Description
View
MFG CO.
1.6 AMPS 200 ? 400 VOLTS SILICON CONTROLLED RECTIFIER
Solid State Devices, Inc.
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
Central Semiconductor Corp
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
Central Semiconductor Corp
20 AMPS 15 ? 200 VOLTS SILICON CONTROLLED RECTIFIER
Solid State Devices, Inc.
25 AMPS 100 ? 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
Solid State Devices, Inc.
SILICON CONTROLLED RECTIFIER 1.6 AMP
Digitron Semiconductors
Silicon Controlled Rectifiers 16 AMPS 200 thru 800 Volts
Central Semiconductor
10 AMPS 200 - 400 VOLTS 20 nsec HYPER SINGEL PHASE BRIDGE RECTIFIER
Solid State Devices, Inc.
SILICON CONTROLLED RECTIFIER 8 AMP, 100 THRU 400 VOLTS
Central Semiconductor
SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 400 VOLTS
Central Semiconductor