SC20H12G2Y Datasheet - STMicroelectronics

Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

FEATUREs
• AEC-Q101 qualified
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• PPAP capable
• Operating Tj from -40 °C to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK compliant

APPLICATIONs
• On board charger