S5DHM6G Datasheet - Taiwan Memory Technology
MFG CO.
Taiwan Memory Technology
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
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Description
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