RJP60D0DPE Datasheet - Renesas Electronics

Features
• Short circuit withstand time (5 μs typ.)
• Low collector to emitter saturation voltage
   VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating and chip bonding