RJL6013DPE Datasheet - Renesas Electronics
MFG CO.
Renesas Electronics
Features
• Built-in fast recovery diode
• Low on-resistance
RDS(on) = 0.66 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Part Name
Description
View
MFG CO.
Silicon N-channel MOS FET High speed power switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET / High speed power switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
