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RGP30B Datasheet - New Jersey Semiconductor

RGP30M image

Part Name
RGP30B

Other PDF
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page
1 Pages

File Size
63.5 kB

MFG CO.
NJSEMI
New Jersey Semiconductor 

Features
• High temperature metallurgically bonded construction
• Glass passivated cavity-free junction
• 3.0 amperes operation at TA=55°C and with no thermal runaway.
• Typical IR less than 0.2uA
• Fast switching for high efficiency

Page Link's: 1 

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