RF2172PCBA-L Datasheet - RF Micro Devices
MFG CO.

RF Micro Devices
Product Description
The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band.
FEATUREs
• 23.5dBm Typical Output Power
• 0dB to 28dB Variable Gain
• 45% Efficiency at Max Output
• On-Board Power Down Mode
• 2.4GHz to 2.5GHz Operation
• 902MHz to 928MHz Operation
Typical Applications
• BluetoothTM PA
• 2.4GHz to 2.5GHz ISM Band Systems
• 902MHz to 928MHz ISM Band Systems
• 3.6V Spread-Spectrum Cordless Phones
• Portable Battery-Powered Equipment
• Spread-Spectrum Systems
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