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RF2125PPCBA Datasheet - RF Micro Devices

RF2125P image

Part Name
RF2125PPCBA

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page
6 Pages

File Size
49.5 kB

MFG CO.
RFMD
RF Micro Devices 

Product Description
The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz.


FEATUREs
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation

Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment

Page Link's: 1  2  3  4  5  6 

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