PSC20065WY(2016) Datasheet - STMicroelectronics

Description
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.

FEATUREs
• No reverse recovery charge in application
   current range
• Switching behavior independent of
   temperature
• Dedicated to PFC applications
• High forward surge capability
• ECOPACK®2 compliant component
• AEC-Q101 qualified
• PPAP capable
• Operating Tj from -40 °C to 175 °C