PBSS4360PAS(2015) Datasheet - Nexperia B.V. All rights reserved

General description
NPN low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5360PAS

FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• High temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with soldarable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified

APPLICATIONs
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)