Part Name
P25NM60N
Description
Other PDF
PDF
page
18 Pages
File Size
515.8 kB
MFG CO.
STMicroelectronics
P25NM60N(2007) Datasheet - STMicroelectronics
STMicroelectronics
Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
General features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
APPLICATIONs
■ Switching application
Part Name
Description
View
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N-channel 600 V - 0.150 ? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh? Power MOSFET
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N-channel 650V - 0.25? - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh? Power MOSFET
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N-CHANNEL 500V - 0.15? - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh? MOSFET ( Rev : 2005 )
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