P100NF03L Datasheet - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0026 Ω
■ LOW THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
■ LOGIC LEVEL DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS