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NCE4606C PDF
NCE4606C Datasheet - Wuxi NCE Power Semiconductor Co., Ltd
MFG CO.

Wuxi NCE Power Semiconductor Co., Ltd
Description
The NCE4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel
VDS = 30V,ID =6A
RDS(ON) < 21mΩ @ VGS=10V
RDS(ON) < 44mΩ @ VGS=4.5V
● P-Channel
VDS = -30V,ID = -6A
RDS(ON) < 32mΩ @ VGS=-10V
RDS(ON) < 56mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
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