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NAND01GR3N6 Datasheet - STMicroelectronics

NAND01G-N image

Part Name
NAND01GR3N6

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23 Pages

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211.8 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Summary description
   The NAND01G-N is a family that combine two memory devices in a Multi-Chip Package: a 1 Gbit NAND Flash memory and 512 Mbit LPSDRAM with 2Kbyte Pages.

   The NAND Flash memory and LPSDRAM components have separate power supplies and grounds. They also have separate control, address and input/output signals, which allows simultaneous access to both devices at any moment.

   They are distinguished by two Chip Enable inputs: EF for the NAND Flash memory and ED for the LPSDRAM.

   The Multi-Chip Packages are available with a 1.8V supply. See Table 1 for a complete list of the products available.

   All devices are stacked and are offered in:
   ● TFBGA107 (10.5 x 13 x 1.2mm)
   ● TFBGA149 (10 x 13.5 x 1.2mm)

   They are supplied with all the NAND Flash memory bits erased (set to ‘1’).
   This datasheet should be read in conjunction with the NAND Flash and LPSDRAM datasheets.


Part Name
Description
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MFG CO.
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory ( Rev : 2006 )
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1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
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2Gb x8, x16: NAND Flash Memory
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Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
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Fujitsu
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
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STMicroelectronics

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