MT58L1MY18DF-7.5 Datasheet - Micron Technology

GENERAL DESCRIPTION
The Micron®SyncBurst™SRAM family employs high speed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK).

FEATURES
• Fast clock and OE# access times
• Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)
• Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control (interleaved or linear burst)
• Automatic power-down
• 100-pin TQFP package
• 165-pin FBGA package
• Low capacitive bus loading
• x18, x32, and x36 versions available