NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR

. . .designed for amplifier and driver applications,

• High DC Current Gain -
   hFE = 25,000 (Min) @ Ic = 200 mAdc
         15,000 (Min) @ IC = 500 mAdc
• Collector-Emitter Breakdown Voltage —
   BVCES = 40 Vdc (Min) @ lc= 100 μAdc
• Low Collector-Emitter Saturation Voltage -
   VCE(sat) = 1.5 Vdc @ Ic= 1.0 Adc
• Monolithic Construction for High Reliability
• Complement to PNP MPS-U95