Part Name
M5M29KB/T331AVP
Other PDF
no available.
PDF
page
32 Pages
File Size
270.3 kB
MFG CO.
Renesas Electronics
HOME >>> Renesas Electronics >>> M5M29KB/T331AVP PDF
M5M29KB/T331AVP Datasheet - Renesas Electronics
Renesas Electronics
DESCRIPTION
The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank.
FEATURES
Access time Random 70ns (Max.)
Page 25ns(Max.)
Supply voltage VCC= 3.0 ~ 3.6V
Ambient temperature Ta=-40 ~ 85 °C
Package 48pin TSOP(Type-I), Lead pitch 0.5mm
Outer-lead finishing : Sn-Cu
APPLICATION
Digital Cellar Phone, Telecommunication,
PDA, Car Navigation System, Video Game Machine
Part Name
Description
View
MFG CO.
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Renesas Electronics
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Renesas Electronics
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY
Renesas Electronics
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
MITSUBISHI ELECTRIC
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
Renesas Electronics
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
MITSUBISHI ELECTRIC
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
MITSUBISHI ELECTRIC
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
MITSUBISHI ELECTRIC
16,777,216-BIT(1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT(262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
Renesas Electronics
Share Link: 