M29W400DB55ZE6F(2004) Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
   The M29W400D is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VCC = 2.7V to 3.6V for Program, Erase
      and Read
◾ ACCESS TIME: 45, 55, 70ns
◾ PROGRAMMING TIME
   – 10µs per Byte/Word typical
◾ 11 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 8 Main Blocks
◾ PROGRAM/ERASE CONTROLLER
   – Embedded Byte/Word Program
      algorithms
◾ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during
      Erase Suspend
◾ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
◾ TEMPORARY BLOCK UNPROTECTION
   MODE
◾ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code M29W400DT: 00EEh
   – Bottom Device Code M29W400D: 00EFh
◾ PACKAGES
   – Compliant with Lead-Free Soldering
      Processes
   – Lead-Free Versions