M29W400DB55N6 Datasheet - STMicroelectronics

Description
   The M29W400D is a 4 Mbit (512 Kb x 8 or 256 Kb x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATUREs
◾ Supply voltage
   – VCC = 2.7 V to 3.6 V for Program, Erase
      and Read
◾ Access time: 45, 55, 70 ns
◾ Programming time
   – 10 µs per byte/word typical
◾ 11 memory blocks
   – 1 boot block (top or bottom location)
   – 2 parameter and 8 main blocks
◾ Program/Erase controller
   – Embedded byte/word program algorithms
◾ Erase Suspend and Resume modes
   – Read and Program another block during
      Erase Suspend
◾ Unlock bypass program command
   – Faster production/batch programming
◾ Temporary block unprotection mode
◾ Low power consumption
   – Standby and Automatic Standby
◾ 100,000 Program/Erase cycles per block
◾ Electronic signature
   – Manufacturer code: 0020h
   – Top device code M29W400DT: 00EEh
   – Bottom device code M29W400DB: 00EFh
   – ECOPACK® packages