M29W256GL70ZS3F Datasheet - Micron Technology

General Description
   The M29W is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 65nm single-level cell (SLC) technology. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode.

   The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected, and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.