M29W160ET79N6F Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
■ ACCESS TIMES: 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160ET: 22C4h
– Bottom Device Code M29W160EB: 2249h