M29F800D Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VCC = 5V ±10% for Program, Erase and Read
■ ACCESS TIME: 55, 70, 90ns
■ PROGRAMMING TIME
   – 10µs per Byte/Word typical
■ 19 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 16 Main Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte/Word Program algorithms
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
   – 64 bit Security Code
■ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code M29F800DT: 22ECh
   – Bottom Device Code M29F800DB: 2258h