M29DW640F Datasheet - Numonyx -> Micron

Summary description
   The M29DW640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

FEATURE summary
◾ Supply voltage
   – VCC = 2.7V to 3.6V for Program, Erase and
      Read
   – VPP =12V for Fast Program (optional)
◾ Asynchronous Page Read mode
   – Page Width 8 Words
   – Page Access 25, 30ns
   – Random Access 60, 70ns
◾ Programming time
   – 10µs per Byte/Word typical
   – 4 Words / 8 Bytes at-a-time Program
◾ Memory blocks
   – Quadruple Bank Memory Array:
      8Mbit+24Mbit+24Mbit+8Mbit
   – Parameter Blocks (at both Top and Bottom)
◾ Dual operations
   – While Program or Erase in a group of
      banks (from 1 to 3), Read in any of the
      other banks
◾ Program/Erase Suspend and Resume
   – Read from any Block during Program
      Suspend
   – Read and Program another Block during
      Erase Suspend
◾ Unlock Bypass Program command
   – Faster Production/Batch Programming
◾ VPP/WP pin for Fast Program and Write Protect
◾ Temporary Block Unprotection mode
◾ Common Flash Interface
   – 64 bit Security Code
◾ Extended Memory Block
   – Extra block used as security block or to
      store additional information
◾ Low power consumption
   – Standby and Automatic Standby
◾ 100,000 Program/Erase cycles per block
◾ Electronic Signature
   – Manufacturer Code: 0020h
   – Device Code: 227Eh + 2202h + 2201
◾ ECOPACK® packages available