M29DW323 Datasheet - STMicroelectronics

Family Overview
Densities from 32Mb to 64Mb
0.15µm process technology
Wide application area covered
technology shrink on going
   higher densities
   improved performances
   Increased reliability

Main Features
M29DW323
32Mb (4Mbx8 / 2Mbx16), Boot Block
Access Time
  70, 90ns
Supply Voltage
  Vcc = 2.7V to 3.6V for Program, Erase and Read
  Vpp = 12V for fast Program (optional)
Programming Time
  10µs per Byte/Word typical
  Double Word / Quadruple Byte Program
Low Power Consumption
  Standby and Automatic Standby
Dual Operations:
  Read in one bank or group of banks while Program or Erase in the other