Part Name
M29DW128G60NF6F
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MFG CO.
Numonyx -> Micron
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M29DW128G60NF6F Datasheet - Numonyx -> Micron
Numonyx -> Micron
Description
The M29DW128G is a 128 Mbit (8 Mb x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. At Power-up the memory defaults to its Read mode.
Features
◾ Supply voltage
– VCC = 2.7 to 3.6 V for Program, Erase and
Read
– VPP =12 V for Fast Program (optional)
◾ Asynchronous Random/Page Read
– Page width: 8 words
– Page access: 25 ns
– Random access: 60 ns
◾ Programming time
– 15 µs per byte/word (typical)
– 32-word write buffer
◾ Erase verify
◾ Memory blocks
– Quadruple bank memory array:
16 Mbit+48 Mbit+48 Mbit+16 Mbit
– Parameter blocks (at top and bottom)
◾ Dual operation
– While Program or Erase in one bank, Read
in any of the other banks
◾ Program/Erase Suspend and Resume modes
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
◾ Unlock Bypass Program
– Faster production/batch programming
◾ Common Flash interface
– 64 bit security code
◾ 100,000 Program/Erase cycles per block
◾ Low power consumption
– Standby and automatic standby
◾ Hardware block protection
– VPP/WP pin for fast program and write
protect of the four outermost parameter
blocks
◾ Security features
– Standard protection
– Password protection
– Additional block protection
◾ Extended memory block
– Extra block used as security block or to
store additional information
◾ Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2200h
◾ ECOPACK® packages available
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