M28W640 Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I/O pin down to 1.65V. An optional 12V VPPpower supply is provided to speed up customer programming.

FEATURES SUMMARY
■SUPPLY VOLTAGE
–VDD= 2.7V to 3.6V Core Power Supply
–VDDQ= 1.65V to 3.3V for Input/Output
–VPP= 12V for fast Program (optional)
■ACCESS TIME
– 3.0V to 3.6V: 80ns
– 2.7V to 3.6V: 90ns
■PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
■COMMON FLASH INTERFACE
■MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
–WPfor Block Lock-Down
■SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
■AUTOMATIC STAND-BY MODE
■PROGRAM and ERASE SUSPEND
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W640CT: 8848h
– Bottom Device Code, M28W640CB: 8849h