M28W320C-GBT Datasheet - STMicroelectronics

DESCRIPTION
The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C are in the 1 state.

■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V: for Program, Erase and Read
   – VDDQ = 1.65V or 2.7V: Input/Output option
   – VPP = 12V: optional Supply Voltage for fast Program
■ ACCESS TIME
   – 2.7V to 3.6V: 90ns
   – 2.7V to 3.6V: 100ns
■ PROGRAMMING TIME:
   – 10µs typical
   – Double Word Programming Option
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
■ COMMON FLASH INTERFACE
■ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
■ BLOCK PROTECTION UNPROTECTION
   – All Blocks protected at Power Up
   – Any combination of blocks can be protected
   – WP for block locking
■ SECURITY
   – 64-bit user Programmable OTP cells
   – 64-bit unique device identifier
   – One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS of DATA RETENTION
   – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W320CT: 88BAh
   – Bottom Device Code, M28W320CB: 88BBh