Part Name
LRIS2K-SBN18/1GE
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MFG CO.
STMicroelectronics
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LRIS2K-SBN18/1GE Datasheet - STMicroelectronics
STMicroelectronics
Description
The LRIS2K is a contactless memory powered by the received carrier electromagnetic wave, which follows the ISO 15693 recommendation for radio frequency power and signal interface. It is a 2048-bit electrically erasable programmable memory (EEPROM). The memory is organized as 64 blocks of 32 bits. The LRIS2K is accessed via the 13.56 MHz carrier electromagnetic wave on which incoming data are demodulated from the received signal amplitude modulation (ASK: amplitude shift keying). The received ASK wave is 10% or 100% modulated with a data rate of 1.6 Kbit/s using the 1/256 pulse coding mode or a Data rate of 26 Kbit/s using the 1/4 pulse coding mode.
FEATUREs
◾ ISO 15693 standard fully compliant
◾ ISO 18000-3 Mode 1 standard fully compliant
◾ 13.56 MHz ±7 kHz carrier frequency
◾ To tag: 10% or 100% ASK modulation using
1/4 (26 Kbit/s) or 1/256 (1.6 Kbit/s) pulse
position coding
◾ From tag: Load modulation using Manchester
coding with 423 kHz and 484 kHz subcarriers
in Low (6.6 Kbit/s) or High (26 Kbit/s) data rate
mode. Supports the 53 Kbit/s data rate with
Fast commands
◾ Internal tuning capacitor 21 pF
◾ 1 000 000 Erase/Write cycles (minimum)
◾ 40 year data retention (minimum)
◾ 2048-bits EEPROM with Block Lock feature
◾ 64-bit unique identifier (UID)
◾ Electrical article surveillance (EAS) capable
(software controlled)
◾ Kill function
◾ Multipassword protection
◾ Read & Write (block of 32 bits)
◾ 5 ms programming time
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