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LMOS61089Q-17 Datasheet - Shanghai Leiditech Electronic Technology Co., Ltd

LMOS61089Q-17 image

Part Name
LMOS61089Q-17

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page
6 Pages

File Size
539.7 kB

MFG CO.
LEIDITECH
Shanghai Leiditech Electronic Technology Co., Ltd 

Description
   LMOS61089Q-17 is a quad forward-conducting buffered p-gate overvoltage protector.
   This device is especially designed to protect monolithic subscriber line card interfaces (SLIC)against transient overvoltages on the telephone line caused by lightning. The SP61089Q has an array of four buffered thyristors with commoned gates and a common anode connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across eachthyristor. The buffer transistors reduce the gate supply current. Positive overloads are clipped to common by forward of the antiparallel diodes.

Features
◾ Quad programmable transient suppressor.
◾ Wide negative firing voltage range: VGKRM=-167V max.
◾ Low dynamic switching voltage: VFRM and VGK(BD).
◾ Low gate triggering current: IGT=5mA max.
◾ Peak pulse current: IPP=30A for 10/1000μs surge.
◾ Holding current: IH=150mA min.

APPLICATION:
   LMOS61089Q-17 is designed to protect communication equipment such as SPC exchanger from being damaged by transient overvoltages at the second level.


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