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K4H560438C-TCA2 Datasheet - Samsung

256MBDDRSDRAM image

Part Name
K4H560438C-TCA2

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51 Pages

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520.6 kB

MFG CO.
Samsung
Samsung 

Key Features
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
    -. Read latency 2, 2.5 (clock)
    -. Burst length (2, 4, 8)
    -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package

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