JS28F256P33BFA Datasheet - Numonyx -> Micron

Introduction
   This application note describes the migration from the NumonyxTM StrataFlash® Embedded Memory (P33-130nm) device to the NumonyxTM StrataFlash® Embedded Memory (P33-65nm) device.

Device Overview 
   The following sections provide a brief overview of the feature differences between the P33 130nm and the P33 65nm devices.This application note describes the migration from the NumonyxTM StrataFlash® Embedded Memory (P33-130nm) device to the NumonyxTM StrataFlash® Embedded Memory (P33-65nm) device.  

P33 130nm Device
   The P33 130nm device features 64-Mbit through 512-Mbit densities and AC/DC specifications for 52MHz operation. Other features include high performance synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 32-word buffer, and an expanded OTP register space. Packaging options include industrystandard Easy BGA, TSOP and Quad+ packages.

P33 65nm Device
   The P33 65nm device features 64-Mbit through 2-Gbit densities and AC/DC specifications for 52 MHz operation. This document covers specially 256-Mbit and 512-Mbit (256M/256M) product information. Other features include high performance synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 512-word buffer, and an expanded OTP register space. The P33 65nm device also features enhanced protection via a password access feature, which allows users to protect write access to the pre-defined blocks. Please contact the Numonyx Sales for further details concerning password access. Packaging options include industry-standard Easy BGA and TSOP packages.