IXKC20N60C Datasheet - IXYS CORPORATION

CoolMOS™ Power MOSFET in ISOPLUS220™ Package
Electrically Isolated Back Surface

N-Channel Enhancement Mode
Low RDS(on), Superjunction MOSFET

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• 3RD generation CoolMOS power MOSFET
   - High blocking capability
   - Low on resistance
   - Avalanche rated for unclamped inductive switching (UIS)
• Low thermal resistance due to reduced chip thickness
• Low drain to tab capacitance(<30pF)

APPLICATIONs
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC)
• Welding
• Inductive Heating

Advantages
• Easy assembly: no screws or isolation foils required
• Space savings
• High power density