IRF830 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on)= 1.35Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
Page Link's:
1
2
3
4
5
6
7
8
Part Name
Description
View
MFG CO.
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-Channel 500V-1.35 ? - 4.5A ? TO-220 PowerMESH? MOSFET
ARTSCHIP ELECTRONICS CO.,LMITED.
4.5A 500V N CHANNEL POWER MOSFET
First Components International
4.5A 500V N CHANNEL POWER MOSFET
First Components International
4.5A, 500V, 1.5?, N-CHANNEL POWER MOSFET ( Rev : 2015 )
Unisonic Technologies
N-Channel MOSFET, FRFET 500V, 4.5A, 1.55?
Fairchild Semiconductor
4.5A, 500V, 1.5?, N-CHANNEL POWER MOSFET ( Rev : 2014 )
Unisonic Technologies
4.5A, 500V, 1.5?, N-CHANNEL POWER MOSFET
Unisonic Technologies
4.5A, 500V, 1.5?, N-CHANNEL POWER MOSFET
Unisonic Technologies
4.5A, 500V, 1.5?, N-CHANNEL POWER MOSFET
Unisonic Technologies