G50N60FL Datasheet - STMicroelectronics

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for High Speed Switching
• 5 s Short−Circuit Capability
• These are Pb−Free Devices

Typical Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptable Power Supply (UPS)