FDS3670(V2) Datasheet - Fairchild Semiconductor

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FEATUREs
• 6.3 A, 100 V.
   RDS(ON) = 0.030 Ω @ VGS = 10 V
   RDS(ON) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (57 nC typical).
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability.