EC2612-99F Datasheet - United Monolithic Semiconductors

Description
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances.

Main Features
0.8dB minimum noise figure @ 18GHz
1.5dB minimum noise figure @ 40GHz
12dB associated gain @ 18GHz
9.5dB associated gain @ 40GHz