DGS15-018CS Datasheet - IXYS CORPORATION

Gallium Arsenide Schottky Rectifier Second generation

FEATUREs
GaAs Schottky Diode with Enhanced Barrier Height:
• lowest operating forward voltage drop due to additional injection of minority carriers
• high switching speed
    - low junction capacity of GaAs diode independent from temperature
    - short and low reverse recovery current peak due to short lifetime of minority carriers
    - soft turn off

Surface Mount Packages:
• Incorporating Single and Dual Diode Topologies
• Industry Standard Package Outlines
• Epoxy meets UL 94V-0

APPLICATIONs
Switched Mode Power Supplies:
• AC-DC converters
• DC-DC converters
with:
• high switching frequency
• high efficiency
• low EMI
for use e. g. in:
• telecom
• computer
• automotive equipment