CSD01060A Datasheet - WOLFSPEED, INC.

Description
   With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

FEATUREs
• Low Forward Voltage (VF) Drop with Positive
   Temperature Coefficient
• Zero Reverse Recovery Current / Forward
   Recovery Voltage
• Temperature-Independent Switching Behavior

APPLICATIONs
• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters