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CEB02N6 Datasheet - Unspecified

CEB02N6 image

Part Name
CEB02N6

Description
N-Channel Enhancement Mode Field Effect Transistor

Other PDF
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page
5 Pages

File Size
40.3 kB

MFG CO.
Unspecified
Unspecified 

[CET]


FEATURES
● 600V , 1.5A , RDS(ON)=5Ω @VGS=10V.
● Super high dense cell design for extremely low RDS(ON).
● High power and current handling capability.
● TO-220F full-pak for through hole

Page Link's: 1  2  3  4  5 

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