C04IE170HP(2009) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies.
FEATUREs
■ High voltage / high current cascode configuration
■ Low equivalent ON resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 1700 V
■ Very low CISS driven by RG = 47 Ω
■ Very low turn-off cross over time
APPLICATION
■ Aux SMPS for three-phase mains
Part Name
Description
View
MFG CO.
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 ?
STMicroelectronics
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 ? ( Rev : 2006_09 )
STMicroelectronics
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT? 1700 V - 3 A - 0.55 ?
STMicroelectronics
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT? 1700 V - 3 A - 0.55 ? ( Rev : 2005 )
STMicroelectronics
Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 ? Power Module
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ?
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 ?
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 1500 V - 8 A - 0.10 ? ( Rev : 2006 )
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 ?
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 ?
STMicroelectronics