BLP05H6200XR Datasheet - NXP Semiconductors.

General description
A 200 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

FEATUREs and benefits
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (HF to 600 MHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ Industrial, scientific and medical applications
■ Broadcast transmitter applications